Beilstein J. Nanotechnol.2018,9, 2573–2580, doi:10.3762/bjnano.9.239
, China School of Environmental Science and Engineering, Kochi University of Technology, Kami, Kochi 782-8502, Japan Center for Nanotechnology in Research Institute, Kochi University of Technology, Kami, Kochi 782-8502, Japan 10.3762/bjnano.9.239 Abstract The photoleakagecurrent and the negative bias
and illumination stress (NBIS)-induced instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with various active layer thicknesses (TIGZO) were investigated. The photoleakagecurrent was found to gradually increase in a-IGZO TFTs irrespective of the TIGZO when the photon energy of
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Keywords: active layer thickness; gate bias; illumination stress; InGaZnO; photoleakagecurrent; thin-film transistors; Introduction
Over the last decade, the amorphous oxide-based semiconductor thin-film transistors (AOS TFTs) have attracted global attention for use in advanced display technologies due
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Figure 1:
(a) Schematic cross-sectional view and (b) the initial transfer characteristics of a-IGZO TFTs with...